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Part Datasheet Search > IGBTs > Infineon > IRGB10B60KDPBF Datasheet PDF
IRGB10B60KDPBF
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IRGB10B60KDPBF Datasheet PDF (15 Pages)
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IRGB10B60KDPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
104 W
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
156 W
Rise Time
20.0 ns
Breakdown Voltage (Collector to Emitter)
600 V
Thermal Resistance
0.8℃/W (RθJC)
Reverse recovery time
90 ns
Input Power (Max)
156 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
156000 mW

IRGB10B60KDPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.66 mm
Size-Width
4.69 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRGB10B60KDPBF Documents

Infineon
15 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
4 Pages / 0.1 MByte
Infineon
1 Pages / 0.13 MByte

IRGB10B60 Documents

Infineon
IGBT Single Transistor, 22A, 2.2V, 104W, 600V, TO-220AB, 3Pins
International Rectifier
Trans IGBT Chip N-CH 600V 22A 3Pin(3+Tab) TO-220AB
International Rectifier
IGBT 600V 22A 156W TO220AB
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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