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Part Datasheet Search > IGBTs > Infineon > IRGP35B60PD-EP Datasheet PDF
IRGP35B60PD-EP
$ 3.181
IRGP35B60PD-EP Datasheet PDF (10 Pages)
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IRGP35B60PD-EP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
308 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
42 ns
Input Power (Max)
308 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
308000 mW

IRGP35B60PD-EP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
15.87 mm
Size-Width
5.31 mm
Size-Height
20.7 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRGP35B60PD-EP Documents

Infineon
10 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
130 Pages / 1.2 MByte
Infineon
2 Pages / 0.17 MByte

IRGP35B60 Documents

Infineon
Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AD Tube
International Rectifier
600V Warp2 150kHz Copack IGBT in a TO-247AC package
International Rectifier
Trans IGBT Chip N-CH 600V 60A 3Pin(3+Tab) TO-247AD Tube
Infineon
Trans IGBT Chip N-CH 600V 60A 308000mW 3Pin(3+Tab) TO-247AC Tube
IRF
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
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