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Part Datasheet Search > IGBTs > Infineon > IRGPS60B120KDP Datasheet PDF
IRGPS60B120KDP
$ 14
IRGPS60B120KDP Datasheet PDF (12 Pages)
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IRGPS60B120KDP Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-274
Power Rating
595 W
Number of Positions
3 Position
Power Dissipation
595 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
180 ns
Input Power (Max)
595 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
595 W

IRGPS60B120KDP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.1 mm
Size-Width
5.5 mm
Size-Height
20.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRGPS60B120KDP Documents

Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.19 MByte
Infineon
1 Pages / 0.12 MByte

IRGPS60B120 Documents

Infineon
Trans IGBT Chip N-CH 1200V 105A 595000mW 3Pin(3+Tab) TO-274AA Tube
International Rectifier
Trans IGBT Chip N-CH 1.2kV 105A 3Pin(3+Tab) TO-274AA
International Rectifier
IGBT 1200V 105A 595W SUPER247
International Rectifier
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, SUPER-247, 3 PIN
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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