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Part Datasheet Search > IGBTs > Infineon > IRGPS66160DPBF Datasheet PDF
IRGPS66160DPBF
$ 64.639
IRGPS66160DPBF Datasheet PDF (12 Pages)
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IRGPS66160DPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-274-3
Power Dissipation
750 W
Breakdown Voltage (Collector to Emitter)
600 V
Reverse recovery time
95 ns
Input Power (Max)
750 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
750 W

IRGPS66160DPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.1 mm
Size-Width
5.5 mm
Size-Height
20.8 mm
Operating Temperature
-40℃ ~ 175℃ (TJ)

IRGPS66160DPBF Documents

Infineon
12 Pages / 0.63 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
2 Pages / 0.17 MByte

IRGPS66160 Documents

Infineon
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International Rectifier
Trans IGBT Chip N-CH 600V 240A 750000mW 3Pin(3+Tab) Super-247 Tube
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