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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRL510L Datasheet PDF
IRL510L
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IRL510L Datasheet PDF (10 Pages)
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IRL510L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
-
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
250pF @25V(Vds)

IRL510L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.41 mm
Size-Width
4.7 mm
Size-Height
15.49 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRL510L Documents

Vishay Siliconix
10 Pages / 1.12 MByte
Vishay Siliconix
9 Pages / 1.12 MByte

IRL510 Documents

Vishay Siliconix
MOSFET N-CH 100V 5.6A TO-220AB
VISHAY
TO-220AB N-CH 100V 5.6A
Vishay Semiconductor
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
International Rectifier
Trans MOSFET N-CH 100V 5.6A 3Pin(3+Tab) TO-220AB
Samsung
Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Infineon
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TI
5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
VISHAY
TO-220-3 N-CH 100V 5.6A 540mΩ
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