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Part Datasheet Search > MOSFETs > International Rectifier > IRL520NPBF Datasheet PDF
IRL520NPBF
$ 0.449
IRL520NPBF Datasheet PDF (9 Pages)
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IRL520NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
10.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
0.22 Ω
Polarity
N-Channel
Power Dissipation
48 W
Part Family
IRL520N
Input Capacitance
440pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
35.0 ns
Input Capacitance (Ciss)
440pF @25V(Vds)
Input Power (Max)
48 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRL520NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.54 mm
Size-Height
15.24 mm
Operating Temperature
-55℃ ~ 175℃

IRL520NPBF Documents

International Rectifier
9 Pages / 0.3 MByte
International Rectifier
20 Pages / 2.6 MByte

IRL520 Documents

VISHAY
TO-220 N-CH 100V 9.2A
Vishay Siliconix
MOSFET N-CH 100V 9.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 9.2A 3Pin(3+Tab) TO-220
Vishay Intertechnology
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Samsung
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Fairchild
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
TI
9.2A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Infineon
TO-220AB N-CH 100V 10A
Infineon
D2PAK N-CH 100V 10A
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