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Part Datasheet Search > MOSFETs > International Rectifier > IRL540NSPBF Datasheet PDF
IRL540NSPBF
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IRL540NSPBF Datasheet PDF (11 Pages)
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IRL540NSPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
36.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
44 mΩ
Polarity
N-Channel
Power Dissipation
3.8 W
Part Family
IRL540NS
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
36.0 A
Rise Time
81.0 ns
Input Capacitance (Ciss)
1800pF @25V(Vds)
Input Power (Max)
3.8 W
Operating Temperature (Max)
175 ℃

IRL540NSPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRL540NSPBF Documents

International Rectifier
11 Pages / 0.18 MByte
International Rectifier
1 Pages / 0.42 MByte
International Rectifier
3 Pages / 0.06 MByte

IRL540 Documents

VISHAY
TO-220 N-CH 100V 28A
Vishay Siliconix
MOSFET N-CH 100V 28A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Fairchild
Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
TO-220AB N-CH 100V 36A
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