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Part Datasheet Search > MOSFETs > VISHAY > IRL540SPBF Datasheet PDF
IRL540SPBF
$ 1.348
IRL540SPBF Datasheet PDF (9 Pages)
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IRL540SPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.077 Ω
Polarity
N-Channel
Power Dissipation
3.7 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
28.0 A
Rise Time
170 ns
Input Capacitance (Ciss)
2200pF @25V(Vds)
Fall Time
80 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.7W (Ta), 150W (Tc)

IRL540SPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Minimum Packing Quantity
2000

IRL540SPBF Documents

VISHAY
9 Pages / 0.26 MByte
VISHAY
10 Pages / 1.01 MByte
VISHAY
3 Pages / 0.06 MByte

IRL540 Documents

VISHAY
TO-220 N-CH 100V 28A
Vishay Siliconix
MOSFET N-CH 100V 28A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Fairchild
Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
TO-220AB N-CH 100V 36A
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