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IRL640A Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220AB Tube

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Documentation:

IRL640A Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on3 Page

IRL640A Datasheet PDF (9 Pages)

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IRL640A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

18.0 A

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

180 mΩ

Polarity

N-Channel

Power Dissipation

110 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

18.0 A

Rise Time

8 ns

Input Capacitance (Ciss)

1705pF @25V(Vds)

Input Power (Max)

110 W

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

110W (Tc)

View Datasheet >

IRL640A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.67 mm

Size-Width

4.7 mm

Size-Height

16.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

IRL640A Environmental

IRL640A Export Classifications

IRL640A Function Overview

IRL640A Documents

IRL640A Datasheet

Fairchild

9 Pages / 0.82 MByte

IRL640A Other Datasheet PDF

Fairchild

10 Pages / 0.87 MByte

IRL640A Drawing Diagrams

Fairchild

1 Pages / 0.06 MByte

IRL640A Notice File

Fairchild

4 Pages / 0.5 MByte

IRL640 Documents

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200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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Vishay Semiconductor

Trans MOSFET N-CH 200V 17A 3Pin(3+Tab) TO-220AB

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Vishay Intertechnology

Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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Samsung

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRL640 Datasheet PDF

Fairchild

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRL640 Datasheet PDF

ON Semiconductor

Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE

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IRF

HEXFET Power MOSFET

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VISHAY

TO-220-3 N-CH 200V 17A 180mΩ

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