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Part Datasheet Search > MOSFETs > Vishay Semiconductor > IRL640STRLPBF Datasheet PDF
IRL640STRLPBF
$ 0.617
IRL640STRLPBF Datasheet PDF (9 Pages)
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IRL640STRLPBF Specifications

TYPE
DESCRIPTION
Number of Pins
3 Pin
Case/Package
TO-263
Drain to Source Resistance (on) (Rds)
0.18 Ω
Polarity
N-Channel
Power Dissipation
3.1 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
17.0 A
Rise Time
83 ns
Input Capacitance (Ciss)
1800pF @25V(Vds)
Fall Time
52 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3100 mW

IRL640STRLPBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃

IRL640STRLPBF Documents

Vishay Semiconductor
9 Pages / 0.89 MByte

IRL640 Documents

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TO-220AB N-CH 200V 17A
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Vishay Intertechnology
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Samsung
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE
IRF
HEXFET Power MOSFET
VISHAY
TO-220-3 N-CH 200V 17A 180mΩ
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