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Part Datasheet Search > MOSFETs > Infineon > IRL7472L1TRPBF Datasheet PDF
IRL7472L1TRPBF
$ 1.891
IRL7472L1TRPBF Datasheet PDF (11 Pages)
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IRL7472L1TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
Direct-FET
Number of Positions
11 Position
Drain to Source Resistance (on) (Rds)
0.00034 Ω
Polarity
N-Channel
Power Dissipation
341 W
Threshold Voltage
1.7 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
59A
Rise Time
176 ns
Input Capacitance (Ciss)
20082pF @25V(Vds)
Fall Time
137 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 341W (Tc)

IRL7472L1TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.74 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRL7472L1TRPBF Documents

Infineon
11 Pages / 0.48 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
37 Pages / 2.01 MByte

IRL7472L1 Documents

Infineon
40V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package
Infineon
Direct-FET N-CH 40V 59A
International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package
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