Part 3D Model

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IRLD024PBF Datasheet PDF - International Rectifier

Manufacturer:

International Rectifier

Category:

MOSFETs

Case Package:

DIP

Description:

Transistor MOSFET N Channel 60V 2.5A 4Pin HexDIP

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3D Model

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Documentation:

IRLD024PBF Datasheet (7 Pages)

IRLD024PBF Datasheet PDF (7 Pages)

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IRLD024PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

4 Pin

Voltage Rating (DC)

60.0 V

Current Rating

2.50 A

Case/Package

DIP

Polarity

N-Channel

Power Dissipation

1.30 W

Breakdown Voltage (Drain to Source)

60.0 V

Continuous Drain Current (Ids)

2.50 A

Rise Time

110 ns

Fall Time

41 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1300 mW

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IRLD024PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Bulk

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IRLD024PBF Environmental

IRLD024PBF Documents

IRLD024PBF Datasheet

International Rectifier

7 Pages / 0.17 MByte

IRLD024 Documents

IRLD024 Datasheet PDF

International Rectifier

60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package

IRLD024 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024 Datasheet PDF

VISHAY

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024 Datasheet PDF

Vishay Semiconductor

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024 Datasheet PDF

IRF

Power MOSFET(Vdss=60V, Rds(on)=0.1Ω, Id=2.5A)

IRLD024PBF Datasheet PDF

VISHAY

HVMDIP-4 N-CH 60V 2.5A 100mΩ

IRLD024PBF Datasheet PDF

Vishay Siliconix

MOSFET N-CH 60V 2.5A 4-DIP

IRLD024PBF Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.1Ω; ID 2.5A; HD-1; PD 1.3W; VGS +/-10V; Qg 18

IRLD024PBF Datasheet PDF

International Rectifier

Transistor MOSFET N Channel 60V 2.5A 4Pin HexDIP

IRLD024PBF Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4

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