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Part Datasheet Search > MOSFETs > Infineon > IRLH5030TRPBF Datasheet PDF
IRLH5030TRPBF
$ 1.124
IRLH5030TRPBF Datasheet PDF (9 Pages)
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IRLH5030TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Power Rating
3.6 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0072 Ω
Polarity
N-Channel
Power Dissipation
3.6 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
13A
Rise Time
72 ns
Input Capacitance (Ciss)
5185pF @50V(Vds)
Fall Time
41 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3600 mW

IRLH5030TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLH5030TRPBF Documents

Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
4 Pages / 0.09 MByte

IRLH5030 Documents

Infineon
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package
Infineon
PQFN N-CH 100V 13A
International Rectifier
MOSFET N-CH 100V 13A 8VQFN
Infineon
PQFN N-CH 100V 13A
International Rectifier
MOSFET N-CH 100V 13A 8VQFN
Infineon
Trans MOSFET N-CH 100V 13A 8Pin PQFN T/R
International Rectifier
Hexfet Power Mosfet
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