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Part Datasheet Search > MOSFETs > Infineon > IRLHM630TRPBF Datasheet PDF
IRLHM630TRPBF
Part 3D Model
$ 0.266
IRLHM630TRPBF Datasheet PDF (9 Pages)
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IRLHM630TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
QFN-8
Power Rating
2.7 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0028 Ω
Polarity
N-Channel
Power Dissipation
2.7 W
Threshold Voltage
800 mV
Input Capacitance
3170 pF
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
21A
Rise Time
32 ns
Input Capacitance (Ciss)
3170pF @25V(Vds)
Fall Time
43 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.7W (Ta), 37W (Tc)

IRLHM630TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
1.05 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLHM630TRPBF Documents

Infineon
9 Pages / 0.52 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
8 Pages / 1.32 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.07 MByte
Infineon
7 Pages / 0.12 MByte

IRLHM630 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package
Infineon
PQFN N-CH 30V 21A
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin PQFN EP T/R
Infineon
PQFN N-CH 30V 21A
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin PQFN EP T/R
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