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IRLL110PBF
$ 0.183
IRLL110PBF Datasheet PDF (8 Pages)
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IRLL110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
1.50 A
Case/Package
SOT-223
Power Rating
3.1 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
540 mΩ
Polarity
N-Channel
Power Dissipation
3.1 W
Threshold Voltage
2 V
Input Capacitance
250pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
1.50 A
Rise Time
47 ns
Input Capacitance (Ciss)
250pF @25V(Vds)
Fall Time
18 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2 W

IRLL110PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tube
Size-Length
6.7 mm
Size-Width
3.7 mm
Size-Height
1.45 mm
Operating Temperature
-55℃ ~ 150℃

IRLL110PBF Documents

Vishay Semiconductor
8 Pages / 0.19 MByte
Vishay Semiconductor
9 Pages / 0.34 MByte
Vishay Semiconductor
8 Pages / 0.58 MByte

IRLL110 Documents

VISHAY
SOT-223 N-CH 100V 1.5A
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
International Rectifier
MOSFET N-CH 100V 1.5A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.54Ω, Id=1.5A)
VISHAY
SOT-223-3 N-CH 100V 1.5A 540mΩ
Vishay Siliconix
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V
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