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IRLL2705TR
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IRLL2705TR Datasheet PDF (9 Pages)
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IRLL2705TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
55.0 V
Current Rating
3.80 A
Case/Package
TO-261-4
Polarity
N-Channel
Power Dissipation
1W (Ta)
Part Family
IRLL2705
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
3.80 A
Rise Time
12 ns
Input Capacitance (Ciss)
870pF @25V(Vds)
Fall Time
22 ns
Power Dissipation (Max)
1W (Ta)

IRLL2705TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Cut Tape (CT)
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLL2705TR Documents

Infineon
9 Pages / 0.15 MByte
Infineon
5 Pages / 0.11 MByte

IRLL2705 Documents

Infineon
SOT-223 N-CH 55V 5.2A
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageh
IRF
HEXFET Power MOSFET
Infineon
SOT-223 N-CH 55V 5.2A
Infineon
SOT-223 N-CH 55V 5.2A
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ω; ID 3.8A; SOT-223; PD 1W; VGS +/-16V; -55
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin (3+Tab) SOT-223 T/R
Infineon
SOT-223 N-CH 55V 5.2A
International Rectifier
Trans MOSFET N-CH 55V 5.2A 4Pin(3+Tab) SOT-223 T/R
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