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Part Datasheet Search > MOSFETs > Fairchild > IRLM110ATF Datasheet PDF
IRLM110ATF
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IRLM110ATF Datasheet PDF (7 Pages)
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IRLM110ATF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
100 V
Current Rating
1.50 A
Case/Package
SOT-223-4
Number of Positions
4 Position
Drain to Source Resistance (on) (Rds)
440 mΩ
Polarity
N-Channel
Power Dissipation
2.2 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
1.50 A
Rise Time
10 ns
Input Capacitance (Ciss)
235pF @25V(Vds)
Input Power (Max)
2.2 W
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.2W (Tc)

IRLM110ATF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLM110ATF Documents

Fairchild
7 Pages / 0.22 MByte
Fairchild
9 Pages / 0.33 MByte
Fairchild
1 Pages / 0.06 MByte

IRLM110 Documents

Fairchild
N CH MOSFET, 100V, 1.5A, SOT-223; Transi; N CH MOSFET, 100V, 1.5A, SOT-223; Transistor Polarity: N Channel; Continuou...
Fairchild
MOSFET N-CH 100V 1.5A SOT-223
ON Semiconductor
MOSFET N-CH 100V 1.5A SOT-223
Samsung
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
ON Semiconductor
Power Field-Effect Transistor
International Rectifier
HEXFET Power MOSFET
Fenghua
Transistor
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