IRLML2803PBF Datasheet PDF - Infineon

●The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Low profile (<1.1mm)

● Ultra low on-resistance

● ±20V Gate-source voltage

● Halogen-free