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IRLML6402PBF
$ 0.216
IRLML6402PBF Datasheet PDF (9 Pages)
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IRLML6402PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.065 Ω
Polarity
P-CH
Power Dissipation
1.3 W
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
3.7A
Rise Time
48 ns
Input Capacitance (Ciss)
633pF @10V(Vds)
Fall Time
381 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1300 mW

IRLML6402PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon

IRLML6402PBF Documents

Infineon
9 Pages / 0.19 MByte
Infineon
4 Pages / 0.21 MByte

IRLML6402 Documents

International Rectifier
Trans MOSFET P-CH Si 20V 3.7A 3Pin SOT-23
Infineon
SOT-23P-CH 20V 3.7A
Infineon
SOT-23P-CH 20V 3.7A
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.065Ω; ID -3.7A; Micro3; PD 1.3W; VGS +/-12V
Infineon
SOT-23P-CH 20V 3.7A
International Rectifier
Trans MOSFET P-CH Si 20V 3.7A 3Pin SOT-23 T/R
International Rectifier
Trans MOSFET P-CH Si 20V 3.7A 3Pin SOT-23 T/R
Infineon
SOT-23P-CH 20V 3.7A
International Rectifier
Tranzistor MOSFET P-Ch. -20V/-3, 7A SOT23
Infineon
SOT-23P-CH 20V 3.7A
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