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Part Datasheet Search > MOSFETs > Infineon > IRLR024NTRPBF Datasheet PDF
IRLR024NTRPBF
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IRLR024NTRPBF Datasheet PDF (11 Pages)
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IRLR024NTRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
38 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.065 Ω
Polarity
N-CH
Power Dissipation
45 W
Threshold Voltage
2 V
Input Capacitance
480 pF
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
17A
Rise Time
74 ns
Input Capacitance (Ciss)
480pF @25V(Vds)
Input Power (Max)
45 W
Fall Time
29 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

IRLR024NTRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR024NTRPBF Documents

Infineon
11 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte
Infineon
1 Pages / 0.13 MByte

IRLR024 Documents

Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Infineon
TO-252
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
DPAK N-CH 55V 17A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Infineon
DPAK N-CH 55V 17A
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