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IRLR024PBF
$ 0.292
IRLR024PBF Datasheet PDF (11 Pages)
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IRLR024PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
100 mΩ
Polarity
N-CH
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
14A
Rise Time
110 ns
Input Capacitance (Ciss)
870pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
41 ns

IRLR024PBF Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2000

IRLR024PBF Documents

VISHAY
11 Pages / 0.75 MByte
VISHAY
12 Pages / 0.21 MByte

IRLR024 Documents

Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Infineon
TO-252
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
DPAK N-CH 55V 17A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Infineon
DPAK N-CH 55V 17A
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