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IRLR024ZPBF
$ 0.436
IRLR024ZPBF Datasheet PDF (11 Pages)
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IRLR024ZPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.058 Ω
Polarity
N-CH
Power Dissipation
35 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
16A
Rise Time
43 ns
Input Capacitance (Ciss)
380pF @25V(Vds)
Fall Time
16 ns
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
35W (Tc)

IRLR024ZPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR024ZPBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
12 Pages / 0.21 MByte

IRLR024 Documents

Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Infineon
TO-252
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
DPAK N-CH 55V 17A
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Infineon
DPAK N-CH 55V 17A
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