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Part Datasheet Search > MOSFETs > VISHAY > IRLR110PBF Datasheet PDF
IRLR110PBF
$ 0.63
IRLR110PBF Datasheet PDF (8 Pages)
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IRLR110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
4.30 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
2.5 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
4.30 A
Rise Time
47 ns
Input Capacitance (Ciss)
250pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
17 ns
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)

IRLR110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2000

IRLR110PBF Documents

VISHAY
8 Pages / 2.01 MByte
VISHAY
11 Pages / 2.08 MByte
VISHAY
2 Pages / 0.15 MByte

IRLR110 Documents

Vishay Siliconix
MOSFET N-CH 100V 4.3A DPAK
VISHAY
TO-252-3 N-CH 100V 4.3A 540mΩ
Vishay Semiconductor
Trans MOSFET N-CH 100V 4.3A 3Pin(2+Tab) DPAK
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRF
POWER MOSFET
VISHAY
TO-252-3 N-CH 100V 4.3A 540mΩ
VISHAY
TO-252-3 N-CH 100V 4.3A 540mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 4.3A; TO-252AA; PD 25W; VGS +/-10V
Vishay Siliconix
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
Trans MOSFET N-CH 100V 4.3A 3Pin(2+Tab) DPAK
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