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Part Datasheet Search > MOSFETs > Infineon > IRLR120NPBF Datasheet PDF
IRLR120NPBF
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IRLR120NPBF Datasheet PDF (11 Pages)
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IRLR120NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
39 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.185 Ω
Polarity
N-Channel
Power Dissipation
48 W
Threshold Voltage
2 V
Input Capacitance
440pF @25V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
10A
Rise Time
35 ns
Input Capacitance (Ciss)
440pF @25V(Vds)
Fall Time
22 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
48W (Tc)

IRLR120NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR120NPBF Documents

Infineon
11 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRLR120 Documents

International Rectifier
MOSFET N-CH 100V 7.7A DPAK
VISHAY
TO-252-3 N-CH 100V 7.7A 270mΩ
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
Vishay Semiconductor
Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Fairchild
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Samsung
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
DPAK N-CH 100V 10A
Infineon
DPAK N-CH 100V 10A
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