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IRLR120NTRPBF Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252-3

Description:

DPAK N-CH 100V 10A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRLR120NTRPBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

IRLR120NTRPBF User Reference Manual Guide (270 Pages)IRLR120NTRPBF Application Note (37 Pages)

IRLR120NTRPBF Datasheet PDF (11 Pages)

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IRLR120NTRPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Power Rating

39 W

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.185 Ω

Polarity

N-CH

Power Dissipation

39 W

Threshold Voltage

2 V

Input Capacitance

440 pF

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

10A

Rise Time

35 ns

Input Capacitance (Ciss)

440pF @25V(Vds)

Input Power (Max)

48 W

Fall Time

22 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

48W (Tc)

View Datasheet >

IRLR120NTRPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

6.73 mm

Size-Width

6.22 mm

Size-Height

2.39 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IRLR120NTRPBF Environmental

IRLR120NTRPBF Function Overview

IRLR120NTRPBF Documents

IRLR120NTRPBF Datasheet

Infineon

11 Pages / 0.26 MByte

IRLR120NTRPBF User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IRLR120NTRPBF Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IRLR120NTRPBF Drawing Diagrams

Infineon

2 Pages / 0.17 MByte

IRLR120NTRPBF Application Note

Infineon

37 Pages / 2.01 MByte

IRLR120NTRPBF Other References

Infineon

1 Pages / 0.13 MByte

IRLR120 Documents

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TO-252-3 N-CH 100V 7.7A 270mΩ

IRLR120 Datasheet PDF

Vishay Siliconix

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IRLR120 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 100V 7.7A 3Pin(2+Tab) DPAK

IRLR120 Datasheet PDF

Infineon

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRLR120 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

IRLR120 Datasheet PDF

Fairchild

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

IRLR120 Datasheet PDF

Samsung

Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

IRLR120NTRPBF Datasheet PDF

Infineon

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