IRLR2905PBF Datasheet PDF - Infineon

●The IRLR2905PBF is a N-channel HEXFET® Power MOSFET. The international rectifier utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Logic-Level Gate Drive

● Ultra Low On-Resistance

● Surface Mount (IRLR2905)

● Straight Lead (IRLU2905)

● Advanced Process Technology

● Fast Switching and Fully Avalanche Rated