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Part Datasheet Search > MOSFETs > Infineon > IRLR2908PBF Datasheet PDF
IRLR2908PBF
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IRLR2908PBF Datasheet PDF (11 Pages)
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IRLR2908PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
120 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.028 Ω
Polarity
N-Channel
Power Dissipation
120 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
80 V
Continuous Drain Current (Ids)
39A
Rise Time
95 ns
Input Capacitance (Ciss)
1890pF @25V(Vds)
Input Power (Max)
120 W
Fall Time
55 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
120W (Tc)

IRLR2908PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
2.39 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR2908PBF Documents

Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.06 MByte

IRLR2908 Documents

Infineon
DPAK N-CH 80V 39A
International Rectifier
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Infineon
DPAK N-CH 80V 39A
Infineon
DPAK N-CH 80V 39A
Infineon
DPAK N-CH 80V 39A
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 80V 39A 3Pin(2+Tab) DPAK T/R
Infineon
Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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