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Part Datasheet Search > MOSFETs > Infineon > IRLR8726TRPBF Datasheet PDF
IRLR8726TRPBF
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IRLR8726TRPBF Datasheet PDF (11 Pages)
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IRLR8726TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.004 Ω
Polarity
N-Channel
Power Dissipation
75 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
86A
Rise Time
49 ns
Input Capacitance (Ciss)
2150pF @15V(Vds)
Input Power (Max)
75 W
Fall Time
16 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
75W (Tc)

IRLR8726TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
7.49 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR8726TRPBF Documents

Infineon
11 Pages / 0.34 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRLR8726 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Infineon
DPAK N-CH 30V 86A
Infineon
DPAK N-CH 30V 86A
Infineon
DPAK N-CH 30V 86A
International Rectifier
Trans MOSFET N-CH 30V 86A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 30V 86A 3Pin(2+Tab) DPAK T/R
International Rectifier
The IRLR8726PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
Infineon
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN
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