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Part Datasheet Search > MOSFETs > Infineon > IRLR8729TRPBF Datasheet PDF
IRLR8729TRPBF
$ 0.134
IRLR8729TRPBF Datasheet PDF (11 Pages)
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IRLR8729TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.006 Ω
Polarity
N-CH
Power Dissipation
55 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
58A
Rise Time
47 ns
Input Capacitance (Ciss)
1350pF @15V(Vds)
Input Power (Max)
55 W
Fall Time
10 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
55W (Tc)

IRLR8729TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLR8729TRPBF Documents

Infineon
11 Pages / 0.33 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte

IRLR8729 Documents

Infineon
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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DPAK N-CH 30V 58A
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DPAK N-CH 30V 58A
International Rectifier
Trans MOSFET N-CH 30V 58A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 30V 58A 3Pin(2+Tab) DPAK T/R
Infineon
DPAK N-CH 30V 58A
International Rectifier
Trans MOSFET N-CH 30V 58A 3Pin(2+Tab) DPAK T/R
Infineon
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Infineon
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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