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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRLU014PBF Datasheet PDF
IRLU014PBF
$ 0.614
IRLU014PBF Datasheet PDF (12 Pages)
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IRLU014PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-251-3
Power Dissipation
2500 mW
Rise Time
110 ns
Input Capacitance (Ciss)
400pF @25V(Vds)
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)

IRLU014PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRLU014PBF Documents

Vishay Siliconix
12 Pages / 0.79 MByte
Vishay Siliconix
11 Pages / 0.77 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRLU014 Documents

VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
International Rectifier
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 7.7A; TO-251AA; PD 2.5W; VGS +/-10V
International Rectifier
Trans MOSFET N-CH 55V 10A 3Pin(3+Tab) IPAK
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