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IRLU120NPBF Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-251-3

Description:

IPAK N-CH 100V 10A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRLU120NPBF Datasheet (11 Pages)

Package Outline Dimension on8 Page 9 Page

IRLU120NPBF User Reference Manual Guide (270 Pages)IRLU120NPBF Application Note (37 Pages)

IRLU120NPBF Datasheet PDF (11 Pages)

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IRLU120NPBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-251-3

Power Rating

48 W

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.185 Ω

Polarity

N-Channel

Power Dissipation

48 W

Threshold Voltage

2 V

Input Capacitance

440 pF

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

100 V

Continuous Drain Current (Ids)

10A

Rise Time

35 ns

Input Capacitance (Ciss)

440pF @25V(Vds)

Fall Time

22 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

48W (Tc)

View Datasheet >

IRLU120NPBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

6.73 mm

Size-Width

2.3 mm

Size-Height

6.1 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IRLU120NPBF Environmental

IRLU120NPBF Function Overview

IRLU120NPBF Documents

IRLU120NPBF Datasheet

Infineon

11 Pages / 0.26 MByte

IRLU120NPBF User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IRLU120NPBF Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IRLU120NPBF Drawing Diagrams

Infineon

2 Pages / 0.17 MByte

IRLU120NPBF Application Note

Infineon

37 Pages / 2.01 MByte

IRLU120NPBF Notice File

Infineon

6 Pages / 0.15 MByte

IRLU120NPBF Other References

Infineon

1 Pages / 0.15 MByte

IRLU120 Documents

IRLU120 Datasheet PDF

Vishay Siliconix

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120 Datasheet PDF

Samsung

Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

IRLU120 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120 Datasheet PDF

Infineon

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

IRLU120 Datasheet PDF

International Rectifier

(IRLR120 / IRLU120) HEXFET Power MOSFET

IRLU120 Datasheet PDF

VISHAY

IPAK N-CH 100V 7.7A

IRLU120 Datasheet PDF

Fairchild

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

IRLU120 Datasheet PDF

Vishay Semiconductor

POWER MOSFET

IRLU120NPBF Datasheet PDF

Infineon

IPAK N-CH 100V 10A

IRLU120NPBF Datasheet PDF

International Rectifier

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W

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