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Part Datasheet Search > MOSFETs > Infineon > IRLZ24NPBF Datasheet PDF
IRLZ24NPBF
$ 0.619
IRLZ24NPBF Datasheet PDF (9 Pages)
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IRLZ24NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
45 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.06 Ω
Polarity
N-CH
Power Dissipation
45 W
Threshold Voltage
2 V
Input Capacitance
480 pF
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55 V
Continuous Drain Current (Ids)
18A
Rise Time
74 ns
Input Capacitance (Ciss)
480pF @25V(Vds)
Input Power (Max)
45 W
Fall Time
29 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
45W (Tc)

IRLZ24NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.54 mm
Size-Height
8.77 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLZ24NPBF Documents

Infineon
9 Pages / 0.74 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte

IRLZ24 Documents

VISHAY
TO-220AB N-CH 60V 17A
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Precision Group
60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Infineon
TO-220AB N-CH 55V 18A
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