IRLZ24PBF Datasheet PDF - Vishay Semiconductor

●The IRLZ24PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.

● Dynamic dV/dt rating

● Logic-level gate drive

● RDS (ON) Specified at VGS = 4 and 5V

● -55 to 175°C Operating temperature range

● Ease of paralleling

● Simple drive requirements