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IRLZ24PBF Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TO-220-3

Description:

TO-220-3 N-CH 60V 17A 100mΩ

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

IRLZ24PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRLZ24PBF Datasheet PDF (9 Pages)

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IRLZ24PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.1 Ω

Polarity

N-Channel

Power Dissipation

60 W

Threshold Voltage

2 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

17.0 A

Rise Time

110 ns

Input Capacitance (Ciss)

870pF @25V(Vds)

Input Power (Max)

60 W

Fall Time

41 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

60W (Tc)

View Datasheet >

IRLZ24PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 175℃

Minimum Packing Quantity

View Datasheet >

IRLZ24PBF Environmental

IRLZ24PBF Function Overview

IRLZ24PBF Documents

IRLZ24PBF Datasheet

VISHAY

9 Pages / 1.77 MByte

IRLZ24PBF Other Datasheet PDF

VISHAY

8 Pages / 1.55 MByte

IRLZ24PBF Notice File

VISHAY

3 Pages / 0.14 MByte

IRLZ24 Documents

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Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB

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Infineon

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

IRLZ24 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN

IRLZ24 Datasheet PDF

Samsung

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IRLZ24 Datasheet PDF

Vishay Precision Group

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