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IRLZ34NLPBF
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IRLZ34NLPBF Datasheet PDF (11 Pages)
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IRLZ34NLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Power Rating
68 W
Polarity
N-CH
Power Dissipation
68 W
Drain to Source Voltage (Vds)
55 V
Continuous Drain Current (Ids)
30A
Rise Time
100 ns
Input Capacitance (Ciss)
880pF @25V(Vds)
Input Power (Max)
3.8 W
Fall Time
29 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)

IRLZ34NLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
10.2 mm
Size-Width
4.5 mm
Size-Height
9.45 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRLZ34NLPBF Documents

Infineon
11 Pages / 0.28 MByte
Infineon
22 Pages / 0.35 MByte

IRLZ34 Documents

VISHAY
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Siliconix
MOSFET N-CH 60V 30A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
Philips
N-channel enhancement mode Logic level TrenchMOS transistor
Infineon
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NXP
30A, 55V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Samsung
Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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