●The IRS23364DSPBF is a high voltage high speed power MOSFET and IGBT Gate Driver with three high-side and low-side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs. An open-drain FAULT signal is provided to indicate that a fault has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output driver features a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum dead-time circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVICs use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600V.
● Drives up to 6-IGBT/MOSFET power devices
● Integrated bootstrap functionality
● Over-current protection
● Over-temperature shutdown input
● Advanced input filter
● Integrated dead-time protection
● Shoot-through (cross-conduction) protection
● Under-voltage lockout for VCC and VBS
● Enable/disable input and fault reporting
● Adjustable fault clear timing
● Separate logic and power grounds
● Tolerant to negative transient voltage
● Designed for use with bootstrap power supplies
● Matched propagation delays for all channels
● 3.3V Input logic compatible
● -40 to 125°C Operating temperature range
●ESD sensitive device, take proper precaution while handling the device.
Part 3D Model
