IS62WV12816BLL-55B2I Datasheet PDF - Integrated Silicon Solution(ISSI)

●DESCRIPTION

●TheISSIIS62WV12816ALL/ IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

●FEATURES

●• High-speed access time: 45ns, 55ns, 70ns

●• CMOS low power operation

●   – 36 mW (typical) operating

●   – 9 µW (typical) CMOS standby

●• TTL compatible interface levels

●• Single power supply

●   – 1.65V--2.2V VDD (62WV12816ALL)

●   – 2.5V--3.6V VDD (62WV12816BLL)

●• Fully static operation: no clock or refresh required

●• Three state outputs

●• Data control for upper and lower bytes

●• Industrial temperature available

●• 2CS Option Available

●• Lead-free available