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Part Datasheet Search > FET Drivers > TI > ISO5851DWR Datasheet PDF
ISO5851DWR
Part 3D Model
$ 3.861
ISO5851DWR Datasheet PDF (42 Pages)
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ISO5851DWR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
16 Pin
Case/Package
SOIC-16
Rise/Fall Time
20 ns
Number of Outputs
1 Output
Number of Channels
1 Channel
Power Dissipation
700 mW
Isolation Voltage
5700 Vrms
Fall Time (Max)
20 ns
Fall Time (Max)
20 ns
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
100 mW

ISO5851DWR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 125℃

ISO5851DWR Documents

TI
42 Pages / 1.42 MByte
TI
2 Pages / 0.29 MByte

ISO5851 Documents

TI
Reinforced Isolated IGBT Gate Driver with High CMTI & Miller Clamp 16-SOIC -40℃ to 125℃
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MOSFET DRVR 2.5A 1Out Hi/Low Side Inv/Non-Inv 16Pin SOIC Tube
TI
MOSFET DRVR 2.5A 1Out Hi/Low Side Inv/Non-Inv 16Pin SOIC T/R
TI
Automotive, High-CMTI 2.5A / 5A Isolated IGBT, MOSFET Gate Driver With Active Protection Features 16-SOIC -40℃ to 125℃
TI
TEXAS INSTRUMENTS ISO5851EVM Evaluation Board, Isolated IGBT DRIVER, 2.5A Source/5A Sink Reinforced Driver
TI
Automotive, High-CMTI 2.5A / 5A Isolated IGBT, MOSFET Gate Driver With Active Protection Features 16-SOIC -40℃ to 125℃
TI
Automotive, High-CMTI 2.5A / 5A Isolated IGBT, MOSFET Gate Driver With Active Protection Features
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