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Part Datasheet Search > FET Drivers > TI > ISO5852SDW Datasheet PDF
ISO5852SDW
Part 3D Model
$ 8.331
ISO5852SDW Datasheet PDF (37 Pages)
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ISO5852SDW Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
16 Pin
Case/Package
SOIC-16
Rise/Fall Time
18ns, 20ns
Number of Outputs
1 Output
Number of Channels
1 Channel
Power Dissipation
1255 mW
Isolation Voltage
5700 Vrms
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
1255 mW
Supply Voltage
15V ~ 30V

ISO5852SDW Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 125℃

ISO5852SDW Documents

TI
37 Pages / 1.52 MByte
TI
40 Pages / 1.17 MByte
TI
32 Pages / 1.52 MByte

ISO5852 Documents

TI
MOSFET DRVR 2.5A 2Out Hi/Lo Side Inv/Non-Inv 16Pin SOIC T/R
TI
MOSFET DRVR 2.5A/5A 2Out Hi/Lo Side Inv/Non-Inv 16Pin SOIC Tube
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃
TI
TEXAS INSTRUMENTS ISO5852SEVM Evaluation Board, IGBT Gate Driver, 2.5A Source/5A Sink
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features
TI
5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver 16-SOIC -40℃ to 125℃o
TI
High-CMTI 2.5A / 5A Isolated IGBT, MOSFET Gate Driver
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