●The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
●An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 μs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential, turning the IGBT immediately off.
●When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
●When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
●The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
●The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
●For all available packages, see the orderable addendum at the end of the data sheet.
● Qualified for Automotive Applications
● AEC-Q100 Qualified With the Following Results:
● Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
● Device HBM Classification Level 3A
● Device CDM Classification Level C6
● 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
● Split Outputs to Provide 2.5-A Peak Source and
●5-A Peak Sink Currents
● Short Propagation Delay: 76 ns (Typ),
●110 ns (Max)
● 2-A Active Miller Clamp
● Output Short-Circuit Clamp
● Soft Turn-Off (STO) during Short Circuit
● Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
● Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
● Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
● 2.25-V to 5.5-V Input Supply Voltage
● 15-V to 30-V Output Driver Supply Voltage
● CMOS Compatible Inputs
● Rejects Input Pulses and Noise Transients Shorter Than 20 ns
● Isolation Surge Withstand Voltage 12800-VPK
● Safety-Related Certifications:
● 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
● 5700-VRMS Isolation for 1 Minute per UL 1577
● CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
● TUV Certification per EN 61010-1 and EN 60950-1
● GB4943.1-2011 CQC Certification
● All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA
●All trademarks are the property of their respective owners.
