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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXA20IF1200HB Datasheet PDF
IXA20IF1200HB
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IXA20IF1200HB Datasheet PDF (7 Pages)
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IXA20IF1200HB Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
165 W
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
350 ns
Input Power (Max)
165 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
165 W

IXA20IF1200HB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IXA20IF1200HB Documents

IXYS Semiconductor
7 Pages / 0.12 MByte
IXYS Semiconductor
6 Pages / 0.12 MByte

IXA20IF1200 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXA20IF1200HB IGBT Single Transistor, 38A, 2.1V, 165W, 1.2kV, TO-247AD, 3Pins
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