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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXA70I1200NA Datasheet PDF
IXA70I1200NA
$ 29.169
IXA70I1200NA Datasheet PDF (6 Pages)
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IXA70I1200NA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Number of Positions
4 Position
Power Dissipation
350 W
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
350 W
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
350 W

IXA70I1200NA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.25 mm
Size-Height
9.6 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IXA70I1200NA Documents

IXYS Semiconductor
6 Pages / 0.13 MByte
IXYS Semiconductor
6 Pages / 0.23 MByte

IXA70I1200 Documents

IXYS Semiconductor
IGBT N-Ch 1200V 100A XPT SOT227B
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