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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXBH12N300 Datasheet PDF
IXBH12N300
$ 3.554
IXBH12N300 Datasheet PDF (5 Pages)
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IXBH12N300 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
160 W
Breakdown Voltage (Collector to Emitter)
3000 V
Reverse recovery time
1.4 µs
Input Power (Max)
160 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160000 mW

IXBH12N300 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXBH12N300 Documents

IXYS Semiconductor
5 Pages / 0.28 MByte
IXYS Semiconductor
5 Pages / 0.17 MByte

IXBH12 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 3000V 30A 160000mW 3Pin(3+Tab) TO-247AD
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