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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXBH2N250 Datasheet PDF
IXBH2N250
$ 2.241
IXBH2N250 Datasheet PDF (5 Pages)
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IXBH2N250 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
32000 mW
Breakdown Voltage (Collector to Emitter)
2500 V
Reverse recovery time
920 ns
Input Power (Max)
32 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
32000 mW

IXBH2N250 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXBH2N250 Documents

IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
5 Pages / 0.22 MByte

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