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IXBH9N160G Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1600V 9A 100000mW 3Pin(3+Tab) TO-247AD

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Documentation:

IXBH9N160G Datasheet (4 Pages)

IXBH9N160G Datasheet PDF (4 Pages)

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IXBH9N160G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Rating

100 W

Power Dissipation

100000 mW

Breakdown Voltage (Collector to Emitter)

1600 V

Input Power (Max)

100 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

100000 mW

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IXBH9N160G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBH9N160G Environmental

IXBH9N160G Export Classifications

IXBH9N160G Function Overview

IXBH9N160G Documents

IXBH9N160G Datasheet

IXYS Semiconductor

4 Pages / 0.07 MByte

IXBH9N160G Other Datasheet PDF

IXYS Semiconductor

1 Pages / 0.6 MByte

IXBH9N160 Documents

IXBH9N160G Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1600V 9A 100000mW 3Pin(3+Tab) TO-247AD

IXBH9N160G Datasheet PDF

Littelfuse

Insulated Gate Bipolar Transistor,

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