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IXBK55N300 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-264-3

Description:

Trans IGBT Chip N-CH 3000V 130A 625000mW 3Pin(3+Tab) TO-264

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Documentation:

IXBK55N300 Datasheet (7 Pages)

IXBK55N300 Datasheet PDF (7 Pages)

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IXBK55N300 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-264-3

Power Dissipation

625000 mW

Breakdown Voltage (Collector to Emitter)

3000 V

Reverse recovery time

1.9 µs

Input Power (Max)

625 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

625000 mW

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IXBK55N300 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Width

5.31 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBK55N300 Environmental

IXBK55N300 Export Classifications

IXBK55N300 Function Overview

IXBK55N300 Documents

IXBK55N300 Datasheet

IXYS Semiconductor

7 Pages / 0.2 MByte

IXBK55N300 Other Datasheet PDF

IXYS Semiconductor

7 Pages / 0.2 MByte

IXBK55 Documents

IXBK55N300 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 3000V 130A 625000mW 3Pin(3+Tab) TO-264

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