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IXBT42N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-268-3

Description:

Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(2+Tab) TO-268

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Documentation:

IXBT42N170 Datasheet (5 Pages)

IXBT42N170 Datasheet PDF (5 Pages)

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IXBT42N170 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Power Dissipation

360000 mW

Breakdown Voltage (Collector to Emitter)

1700 V

Reverse recovery time

1.32 µs

Input Power (Max)

360 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

360000 mW

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IXBT42N170 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBT42N170 Environmental

IXBT42N170 Export Classifications

IXBT42N170 Function Overview

IXBT42N170 Documents

IXBT42N170 Datasheet

IXYS Semiconductor

5 Pages / 0.17 MByte

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IXBT42N170 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(2+Tab) TO-268

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