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IXBX25N250 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin(3+Tab) PLUS 247

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Documentation:

IXBX25N250 Datasheet (6 Pages)

IXBX25N250 Datasheet PDF (6 Pages)

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IXBX25N250 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

300000 mW

Breakdown Voltage (Collector to Emitter)

2500 V

Reverse recovery time

1.6 µs

Input Power (Max)

300 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

300000 mW

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IXBX25N250 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IXBX25N250 Environmental

IXBX25N250 Export Classifications

IXBX25N250 Function Overview

IXBX25N250 Documents

IXBX25N250 Datasheet

IXYS Semiconductor

6 Pages / 0.16 MByte

IXBX25 Documents

IXBX25N250 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin(3+Tab) PLUS 247

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