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IXDN75N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B

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Product Pictures

Documentation:

IXDN75N120 Datasheet (4 Pages)

IXDN75N120 Datasheet PDF (4 Pages)

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IXDN75N120 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

SOT-227-4

Power Dissipation

660000 mW

Breakdown Voltage (Collector to Emitter)

1200 V

Input Capacitance (Cies)

5.5nF @25V

Input Power (Max)

660 W

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

660000 mW

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IXDN75N120 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-40℃ ~ 150℃ (TJ)

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IXDN75N120 Environmental

IXDN75N120 Export Classifications

IXDN75N120 Function Overview

IXDN75N120 Documents

IXDN75N120 Datasheet

IXYS Semiconductor

4 Pages / 0.07 MByte

IXDN75 Documents

IXDN75N120 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 1200V 150A 660000mW 4Pin SOT-227B

IXDN75N120A Datasheet PDF

IXYS Semiconductor

High Voltage IGBT

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