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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXEH40N120D1 Datasheet PDF
IXEH40N120D1
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IXEH40N120D1 Datasheet PDF (5 Pages)
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IXEH40N120D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-3-3
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
180 ns
Input Power (Max)
300 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

IXEH40N120D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXEH40N120D1 Documents

IXYS Semiconductor
5 Pages / 0.09 MByte
IXYS Semiconductor
4 Pages / 0.18 MByte

IXEH40N120 Documents

IXYS Semiconductor
IGBT 1200V 60A 300W TO247AD
IXYS Semiconductor
IGBT 1200V 60A 300W TO247AD
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